Nanoscale silicon devices / edited by Shunri Oda, David K. Ferry.
Contributor(s): Oda, Shunri
| Ferry, David K
.
Material type: 



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RGU Central Library Reference | 621.38152 NAN-N (Browse shelf) | Available | 82565 |
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621.38152 INI-R Radiation effects in semi conductors | 621.38152 MAI-A Applications of silicon-germanium hetrostructure devices: | 621.38152 MED-G Gallium nitride (GaN) | 621.38152 NAN-N Nanoscale silicon devices / | 621.38152 PAN-H Handbook of semiconductor electrode position: | 621.38152 TAM- S II- VI semiconductor materials and their applications | 621.38152 YOS-T Thin-film organic photonics |
Includes bibliographical references and index.
Physics of silicon nanodevices / David K. Ferry and Richard Akis -- Tri-gate transistors / Suman Datta -- Variability in scaled MOSFETs / Toshiro Hiramoto -- Self-heating effects in nanoscale 3D MOSFETs / Tsunaki Takahashi and Ken Uchida -- Spintronics-based nonvolatile computing systems / Tetsuo Endoh -- NEMS devices / Yoshishige Tsuchiya and Hiroshi Mizuta -- Tunnel FETs for more energy-efficient computing / Adrian M. Ionescu -- Dopant-atom silicon tunneling nanodevices / Daniel Moraru and Michiharu Tabe -- Single-electron transfer in Si nanowires / Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi -- Coupled Si quantum dots for spin-based qubits / Tetsuo Kodera and Shunri Oda -- Potential of nonvolatile magnetoelectric devices for spintronic applications / Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov.
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